Document Type


Publication Date

Spring 2017


In order to replace semiconductors that rely on rare Earth and costly elements, the search for analogous semiconductors formed by plentiful elements began. A recently developed material, ZnSnN2, is the analog to InN. In this project, the Seebeck and Hall effects are measured along with the electrical conductivity. The carrier concentration can then be determined from the Hall coefficient. Using the method of four coefficients and a general theory of these properties, the bounds on effective mass are determined corresponding to the different possible scattering parameters. The results show that samples with carrier concentrations around 6-9Å~10 19 cm-3 exhibit properties consistent with the model, but not samples with a higher concentration of 1.02Å~10 21 cm-3.

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