Date of Award

Spring 2017

Abstract

Zinc Tin Nitride (ZnSnN2) is the II-IV-V2 semiconductor analog to the III-V Indium Nitride (InN), and the two are predicted to have similar properties that make them attractive for thermoelectric and photovoltaic applications. Replacing the costly and rare indium with more Earth-abundant and inexpensive zinc and tin makes ZnSnN2 a potentially valuable alternative to InN. In this work, the temperature dependence of the Seebeck coefficient, Hall coefficient, and electrical resistivity were measured in a range of 7-300K. The Hall and resistivity measurements enabled the determination of Hall mobility and carrier concentration. Using the solutions to the Boltzmann transport equations in the relaxation time approximation and assuming a parabolic band, bounds on density of states effective mass are determined corresponding to different possible electron scattering mechanisms. The results show that samples with carrier concentrations around 6-9×10 19 cm-3 exhibit properties consistent with the model, but not samples with a higher concentration of 1.02×10 21 cm-3 .

Creative Commons License

Creative Commons Attribution 4.0 License
This work is licensed under a Creative Commons Attribution 4.0 License.

Share

COinS